| 摘要 |
PURPOSE:To prevent the occurrence of the short circuit or the like due to pin holes by having on a semiconductor substrate a first insulating film which can be a diffusion mask, stacking on this insulating film a second insulating film having a linear expansion coefficient which is nearer to the semiconductor substrate than to the first insulating film, and disposing an electrode on this second insulating film, thereby mitigating the distortion to be caused by the difference in linear expansion coefficient between the crystal and the insulating film. CONSTITUTION:A SiO2 film 6 is stacked on a Si3N4 film 4 and a Zn-diffused P<+> layer 5, the SiO2 film in the same position as the diffusion window formed on the Si3N4 film 4 is removed, and Al is vacuum-deposited, patterned into a predetermined shape, and sintered in a nitrogen N2 atmosphere, thereby forming an Al electrode 7. Since the SiO2 film 6 is thus stacked on the Si3N4 film 4, even if a pin hole (2) 10 exists in the SiO2 film 6, the probability of a pin hole (1) 9 coupling with the pin hole (2) is extremely low, and therefore, the rate of occurrence of the short circuit or leakage current failure to be caused between the Al electrode 7 and an n-GaAs0.61P0.39 epitaxial layer 3 through the pin holes of the Si3N4 film 4 and the SiO2 film 6 is very small. |
