| 摘要 |
<p>PURPOSE:To make an etching rate constant and the width of the lines of a pattern uniform by forming a resist pattern on a thin film formed on a substrate, heat treating the substrate and dry-etching the thin film. CONSTITUTION:A thin film such as a light shielding Cr film is formed on a substrate such as a quartz glass plate and a prescribed resist pattern is formed on the film. The substrate is put in a plasma etching device, an inert gas such as N2 is introduced to carry out plasma treatment and the substrate is heated to a nearly uniform temp. over the whole surface. The thin film is selectively dry-etched to form a thin film pattern and then the resist pattern is removed. By this method, uneven etching is inhibited, a pattern having lines of a desired width is formed and the etching rate is kept constant even after continuous etching.</p> |
