| 摘要 |
PURPOSE:To obtain an LED having excellent temperature characteristics, by providing nonreflecting film on an emitting surface of light from an active layer, providing a pulse current electrode on a semiconductor layer close to the emitting surface, and providing a DC current electrode on a layer far from the emitting surface. CONSTITUTION:On an n-InP substrate 1, an n-InP buffer layer 2, an InGaAsP active layer 3, a p-In clad layer 4 and an n-InGaAsp cap layer 5 are laminated. With an insulating film 6 as a mask, a stripe shaped p-type layer 7 reaching the layer 4 is formed. A p-type pulse current electrode 8 is provided on a layer close to a light emitting surface 12. A ptype DC electrode 9 is provided at the side far from the light emitting surface 12 so that the electrode 9 is not contacted with the electrode 8. The part for forming the electrode 8 becomes a light exciting part when a current is injected into the active layer. The part for forming the electrode 9 becomes a light absorbing region when a DC is not present and becomes a gain region when the current flows. Therefore the optical output can be largely changed by slightly changing the DC with the temperature used. The LED having excellent temperature characteristics is obtained. Thus the constant optical output is readily obtained. |
