| 摘要 |
PURPOSE:To obtain a device suitable for controlling a large current, by providing a drain electrode on one side of a substrate, providing a source electrode and an insulating gate electrode on the other side, forming a channel at the surface of a reverse conductivity region at the surface of the other side, thereby providing another source electrode at the outside of said region. CONSTITUTION:On a semiconductor substrate 2, an N<+> layer 3a, which is to become a drain region of an FET, and an N<-> layer 3b are provided. P layers (reverse conductivity type region) 5 which are separated one another are formed on the surface of the substrate 2. N<+> layer 3c are formed on the surface of the layer 3b at the outsides of the P layers 5. A drain electrode 6 is formed on the layer 3a. A source electrode 7 is formed so as to bridge the surfaces of P<+> layers 4, which are formed separately from the surfaces of the P layers 5. A gate electrode 8 is formed on each insulating layer 10. Another source electrode 9 is formed on each N<+> layer 3c. The channel of an insulating gate FET is formed on the surface part of each P layer 5 of the FET 1 in this constitution. The channel of a junction type FET is formed into the drain region. |
