| 摘要 |
PURPOSE:To obtain a high-quality, highly reliable semiconductor device, by introducing one kind of P, As or B in high concentration into the side wall part of a polycrystalline Si pattern from the upper surface part, and forming a thermal oxide film on the upper surface and the side surface part of said pattern. CONSTITUTION:A polycrystalline Si film 3 is deposited on an insulating film 2 which is provided on an Si substrate 1. When the film 3 consists of undoped polycrystalline Si; P, As or B is introduced by diffusion, ion implantation or the like after the deposition. Then, photoresist 4 is applied on the film 3. A pattern is formed on the photoresist 4 by exposure and development. With the photoresist as a mask, reactive ion etching is performed to form a polycrystalline Si pattern 3'. Then, ions are implanted into the upper parts of the resist 4 and the pattern 3' at an incident angle more than a specified angle. Thus a high concentration layer 5 of Si, As or B is formed on the side wall part of the pattern 3'. |
