| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device and its manufacturing method capable of shallowly controlling channel profiles, improving the controllability of impurity profiles, and performing the microfabrication of elements. SOLUTION: The non-volatile semiconductor storage device including at least one MOS transistor in a peripheral circuit is provided with a semiconductor substrate 20, element separation insulating films 34 buried in element separation grooves 33 formed on the semiconductor substrate 20 to form a plurality of element forming areas, floating gates 26, 29 formed in respective element forming areas through a 1st gate insulating film 25, a control gate 37 formed on the floating gates 26, 29 through a 2nd gate insulating film 35, and source-drain areas 40 formed on the semiconductor substrate 20 by self-matching with the control gate 37. The floating gates are formed like a self-matching state on the element separation ends of a channel widthwise direction and constituted of a plurality of polycrystal silicon films. COPYRIGHT: (C)2005,JPO&NCIPI
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