| 摘要 |
PROBLEM TO BE SOLVED: To enhance the uniformity of etch rate by increasing the penetration speed of an etchant for exfoliation, in a method wherein a first substrate is exfoliated after a semiconductor thin film formed on the first substrate is fixed to a second substrate. SOLUTION: Etchant passages (50, 54, 56, 58) are arranged on the second substrate (40) except at least the paste schedule region (44) of the semiconductor thin film (20). The etchant passages contains e.g. pierced holes (50, 56) and/or trenches (54, 58), and it is desirable that these are formed before the semiconductor thin film (20) is stuck to the second substrate. The etchant (62) reaches a peeling layer (13) between the semiconductor thin film (20) and the second substrate (40) through these passages, and removes the peeling layer (13) by etching. COPYRIGHT: (C)2005,JPO&NCIPI
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