| 摘要 |
PURPOSE:To prevent defective fusion of a fuse, by using wiring polysilicon, which is provided beneath wiring aluminum, as the fuse of a redundancy circuit. CONSTITUTION:A field insulating region 2 is formed on the upper part of semiconductor substrate 1. Wiring polysilicon 3 for preventing alloy spike of aluminum is provided on the upper surface of the region 2. Wiring aluminum 4 is provided on both sides of the wiring polysilicon 3 other than the central part. The wiring aluminum 4 is covered with a passivation film 5. This structure is obtained by the following method: after a passivation film is grown, the passivation film at the fusing part of a fuse in a redundancy circuit is removed by selective etching; and thereafter the wiring aluminum is etched with the passivation film as a mask. Thus the defective fusion of the fuse can be prevented. |
