| 摘要 |
In a semiconductor element having a doped semiconductor substrate (1) into which an oppositely doped upper doping zone (3) is introduced from above and forms a p-n junction (2) which emerges at the surface in the edge region, to improve the reverse voltage performance, an oppositely doped lower doping zone (15) is buried in the semiconductor substrate (1) underneath the point of emergence of the p-n junction (2) at the surface and reduces the charge carrier concentration in the critical region. …<??>Notable features of this structure are a retention of the planar surface and an easy manufacturability. …<IMAGE>… |
