| 摘要 |
An MOS temperature sensing circuit formed on a silicon substrate which may be used for disabling portions of output drivers in EPROM at high temperatures. The circuit uses a first and second diode, one of which has substantially larger area than the other. The diodes are reverse biased through field-effect transistors. The leakage from the smaller diode is used to cancel the effects process variations on the leakage current of the larger diode, thereby providing a circuit with an output substantially dependent only on temperature. |
