| 摘要 |
PURPOSE:To separate a semiconductor element formed on an insulating film without using thermal step of thermally oxidizing and to eliminate the flow of a channel current to the sidewall of an element forming region by forming a conductor film which becomes a gate electrode in advance on the insulating film, and then forming a gate oxide film and a single crystal semiconductor film. CONSTITUTION:After a conductor film 13 which becomes a gate electrode is formed on an insulating film 12 deposited on a semiconductor substrate 11, a gate oxide film 15 is formed on the film 13, and a single crystal semiconductor film 18 is formed on the film 15. Then, the film 18 except an element forming region is removed, the film 13 except the element forming region is selectively etched to form a wiring layer, and diffused layers of source, drain are formed in the film 18 by ion implanting. The step of forming the film 18 includes, for example, deposing an amorphous or polycrystalline semiconductor film on the film 15, and then irradiating a laser beam or a charged beam to melt and recrystallize the semiconductor film. |
