| 摘要 |
The present invention provides a system for producing a triple-gate transistor segment ( 300 ), utilizing a standard semiconductor substrate ( 302 ). The substrate has a plurality of isolation regions ( 304 ) formed along its upper surface in a distally separate relationship, defining a channel region ( 306 ). A form structure ( 308 ) is disposed atop the isolation regions, and defines a channel body area ( 310 ) over the channel region. A channel body structure ( 316 ) is disposed within the channel body area, and is engineered to provide a blunted corner or edge ( 318 ) along a perimeter of its upper exposed surface. The form structure is then removed, and subsequent processing is performed.
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