| 摘要 |
PURPOSE:To improve the degree of integration by providing a common gate electrode on MISFETs for driving SRAM flip-flops and superimposing load MISFETs on the above gate electrode. CONSTITUTION:On a principal surface of a well region 2, driven MISFETsQn are formed each comprising a gate insulating film 5, a gate electrode 6 and a source and drain region 10. Semiconductor regions 10; that is, source regions are constructed with the source regions of other MISFETQn in one. Load MISFETQp are formed on the upper part of the driver MISFETQn. In other words, the FETQp are composed of: the gate electrodes 6 that are used in common by the gate electrode of the driven FETQn, channel formation regions 8A that are formed on the gate electrodes 6 after being superimposed on the above electrodes 6, and semiconductor regions 8B, that is, the source regions or the drain regions. |
