| 发明名称 |
METHOD OF DOPING FOR TRENCH FORMED IN SEMICONDUCTOR SUBSTRATE |
| 摘要 |
Method of producing a well-defined doping in side walls (4) and bottoms (5) of trenches (2) in semiconductor substrates (1) by cleaning the side walls (4) and the bottoms (5) by means of a high-temperature process and then epitaxially depositing a layer (6) of the semiconductor material of the substrate (1) which contains the dopant forming the well-defined doping. <IMAGE> |
| 申请公布号 |
JPS6353920(A) |
申请公布日期 |
1988.03.08 |
| 申请号 |
JP19870204944 |
申请日期 |
1987.08.17 |
| 申请人 |
SIEMENS AG |
发明人 |
HARARUTO BINDAA;HAINRITSUHI GAIGAA;UORUFUGANGU HEENRAIN;FURANTSU ZETORAAKU |
| 分类号 |
H01L21/22;H01L21/225;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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