Non-volatile ferroelectric memory device with circuit for processing fail cell and control method therefor,申请号KR20050033156-传众专利搜索

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发明名称	Non-volatile ferroelectric memory device with circuit for processing fail cell and control method therefor
摘要
申请公布号	KR100694406(B1)	申请公布日期	2007.03.12
申请号	KR20050033156	申请日期	2005.04.21
申请人		发明人
分类号	G11C11/22	主分类号	G11C11/22
代理机构		代理人
主权项
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