| 摘要 |
PURPOSE:To prevent a short circuit between a collector and an emitter in a semiconductor device having an element isolation region containing an insulating film effectively by boring an opening section to an Si3N4 film formed on a semiconductor substrate, introducing an impurity for shaping a base through the opening section and introducing an impurity for shaping the emitter through one part of the opening section. CONSTITUTION:An N<+> type buried layer 12 is diffused and formed to the surface layer section of a P type Si substrate 1, an N type layer 14 as a collector is grown on the whole surface containing the layer 12 in an epitaxial manner, and the peripheries of these layers are surrounded by a thick oxide film 15 for isolation intruding in the substrate 1. The whole surface is coated with a thick Si3N4 layer 19, an opening is bored positioned on the layer 14, and a thin natural oxide film formed on the layer 14 is removed until etching intrudes under the layer 19 through etching. A P type base region 16 is diffused and formed in the layer 14, and an N<+> type walled emitter region 17 is shaped in the region 16 by utilizing said opening, and the upper section of the region 17 is coated with a thin SiO2 film 21 connecting to the film 15. Accordingly, a walled emitter transistor, an area and capacitance thereof are small and which operates at high speed, is obtained. |
