发明名称 ELECTRON BEAM EXPOSURE
摘要 PURPOSE:To enhance equivalently sensitivity of a wafer even when an existing resist is used, and to enale to perform pattern drawing at a high throughput by a method wherein the whole surface of the mask or the wafer is exposed uniformly using floodbeams before pattern drawing according to an electron beam is to be performed or after pattern drawing is completed. CONSTITUTION:The whole surface of a mask or a wafer is exposed uniformly using floodbeams before pattern drawing according to an electron beam is to be performed or after pattern drawing is completed. For example, after a circuit pattern is drawn on the mask 12 or the wafer by a drawing mechanism, or before drawing is to be performed, a floodgun controller 11 is made to come into operation, and floodbeams are irradiated uniformly by floodguns 10 to the whole surface of the mask 12 or the wafer. The floodguns 10 are provided by two pieces, for example, as to enable to obtain easily uniformity of floodgun irradiation, and an irradiation dose according to the fooldbeam is made as to be enabled to be controlled accurately by the floodgun controller 11 and a control computer 15.
申请公布号 JPS59198720(A) 申请公布日期 1984.11.10
申请号 JP19830072105 申请日期 1983.04.26
申请人 TOSHIBA KK 发明人 KOYAMA KIYOMI
分类号 G03F7/20;H01J37/317;H01L21/027 主分类号 G03F7/20
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