发明名称 |
SEMICONDUCTOR MEMORY DEVICES |
摘要 |
A metal-insulator semiconductor dynamic memory device comprising sense amplifiers arrayed on a semiconductor substrate and column decoders. Each of the column decode being provided for a plurality of sense amplifiers and selecting one or more sense amplifiers from the plurality of sense amplifiers, the column decoders being dispersed on both sides of the arrayed sense amplifiers. A plurality of control signal lines which, in order to select the sense amplifiers, control gate elements connected between bit lines connected to the sense amplifiers and data bus lines and which are disposed on both sides of the arrayed sense amplifiers. Conducting lines are also disposed between the sense amplifiers and deliver signals from the control signal lines, for selecting sense amplifiers to the gate elements on the opposite side of the control signal lines with regard to the arrayed sense amplifiers. |
申请公布号 |
DE3278055(D1) |
申请公布日期 |
1988.03.03 |
申请号 |
DE19823278055 |
申请日期 |
1982.11.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
NOZAKI, SHIGEKI;TAKEMAE, TOSHIHIRO |
分类号 |
G11C11/419;G11C7/06;G11C11/407;G11C11/408;G11C11/409;(IPC1-7):G11C11/24 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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