发明名称 MANUFACTURE OF TARGET MATERIAL FOR SPUTTERING
摘要 PURPOSE:To manufacture a target material composed of titanium silicide sintered compact reduced in oxygen content, by compacting a powder consisting of Si and Ti in a specific atomic ratio and then by sintering the resulting green compact under specific temp. conditions. CONSTITUTION:A powder mixture consisting of Ti powder and/or Ti silicide powder and Si powder or a powder of an alloy consisting of Ti silicide and Si, both having an atomic ratio of Si to Ti of 2.1-4.0, is press-compacted. The resulting green compact is sintered at a temp. between the eutectic temp. of Ti silicide and Si and the melting point of Ti silicide, 1,330-1,500 deg.C. In this way, the target material composed of titanium silicide sintered compact with reduced oxygen content and forming a sputtering film free of peeling from a substrate and having relatively low seat resistance can be obtained.
申请公布号 JPS6350468(A) 申请公布日期 1988.03.03
申请号 JP19860194817 申请日期 1986.08.20
申请人 MITSUBISHI METAL CORP 发明人 HIJIKATA KENICHI;SUGIHARA TADASHI;KOMABAYASHI MASASHI
分类号 C23C14/34 主分类号 C23C14/34
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