SEMICONDUCTOR MEMORY AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor memory having a capacitor formed by utilizing a groove formed in a semiconductor substrate and an insulated gate field effect transistor and suppressing expansion of a depletion layer from the groove, and a method for fabricating the same are disclosed. An area occupied by each memory cell can be made very small and a distance between the memory cells can also be made very small, accordingly, high density integration is facilitated.