Semiconductor memory device.

摘要

A semiconductor memory device enabling a two or more direction data access with a high speed, a simple circuit construction and an easy selection. A semiconductor memory device including: a plurality of word lines; a plurality of bit lines; a plurality of momory cells (l0) connected to the bit lines and the word lines; a first selection unit operatively connected to the word lines, for selecting one of the word lines in response to a first address signal; and a second selection unit, operatively connected to the bit lines, for receiving a plurality of bit data from the bit lines and selecting at least two bit data from the received plurality of bit data in response to a second address signal. A relationship between the at least two bit data and the second address signal is changed in response to an access direction signal which designates one of the access directions.