| 摘要 |
PURPOSE:To obtain the titled material having less tendency for generating a pin hole by incorporating a kind of specific compds. to a layer of hydrophilic colloid layers formed on a substrate body, and a kind of the prescribed compd. to the outermost layer of the hydrophilic colloid layer which exists on one side of the substrate body, respectively. CONSTITUTION:The one kind of the compd. shown by formula I is incorporated in at least one layer of the hydrophilic colloid layer formed on the substrate body, and the one kind of the compd. shown by formula II is incorporated in the outermost layer of the hydrophilic colloid layer which exists on the one side of the substrate body. In the formula, R<1>, R<2> and R<3> are each hydrogen atom or a group having a positive or a negative value (gamma) of Hammett's rule, X is an anion, A is a monomer having two alpha,beta-ethylenic unsatd. double bonds, B is a monomer having a alpha,beta-ethylenic unsatd. double bond, C is a fluorine contg. monomer having a alpha,beta-ethylenic unsatd. double bond, (x) is 0-50mol%, (y) is 0-49.5mol%, (z) is 50-100mol%. Thus, the titled material having remarkably less tendency for generating pin hole in a return step due to charging after processing is obtd. |
