| 摘要 |
<p>This invention provides a transparent electroconductive film comprising a group III element-doped ZnO grown on a base, and a process for producing the same. In recent years, transparent electrodes of ITO have widely been used, for example, in solar batteries. Since, however, indium is a material, which is expensive and has a fear of depletion of resources, the development of a ZnO-type transparent electrode using Zn, which is inexpensive and can be stably supplied, is being forwarded. The ZnO-type transparent electroconductive film, however, suffers from, for example, a problem that standing under a highly humid environment leads to increased electric resistivity due to moisture adsorption. The above problem has been solved, for example, by adopting a transparent electroconductive film comprising a region having a crystal structure in which c axes orient to a plurality of mutually different directions.</p> |
