| 摘要 |
PURPOSE:To prevent breakdown of Al wiring film and to obtain the Al wiring film having low resistivity, by a constitution, in which C is included in Al, as a metal wiring film, and forming the metal wiring film in plasma, which includes at least Al and C. CONSTITUTION:This device comprises an Si substrate 1, a diffused layer 2, an SiO2 oxide film 3 and an Al wiring film 4 including C. When the film is formed by a plasma CVD method, e.g., an Si wafer 11 is placed in a parallel- flat-plate type plasma chamber 10, in which a vacuum state is provided, trimethyl Al gas is dilluted with hydrogen gas and the gas is introduced in the chamber 10 through a shower state nozzle 14 of an upper electrode. At this time, the trimethyl Al is cooled to about 5 deg.C, which is lower than a melting point (15 deg.C), and used. For the metal wiring film 4, Al is formed at a temperature less than a thermal decomposition temperature (i. e., a temperature, where Al is not condensed). Thereafter, heat treatment is performed. The concentration in the Al film is controlled by changing RF power and the amount of dilluting H2. The concentration of carbon is more than solid solution limit and less than 20%. The carbon is present in a chemically bonded state as Al-C in the aluminum. |
