| 摘要 |
A charge transfer device includes a semiconductor substrate, a channel region formed on the semiconductor substrate and having a wide part, a narrow part and a contact portion contacting the wide and narrow part to form a path of charges being transferred from the wide part to the narrow part and a plurality of transfer electrodes formed on the semiconductor substrate to cover the channel region, the contact portion being located under an edge of one of transfer electrodes on the side of charge transfer direction.
|
