| 摘要 |
PURPOSE: To assure the even and high ashing speed by accelerating the chemical oxidation reaction to a coated film by a method wherein an ozone producer producing ozone by electrolyzing electrolyte such as water etc., is provided to feed gas containing the produced ozone in high concentration to a semiconductor wafer closely opposing to the ozone producer. CONSTITUTION:A wafer holder 14 suction-holding a semiconductor wafer 13 downward by e.g. a vacuum chuck 12 etc. is arranged in a processing chamber 11 while the wafer holder 14 with a heater 16 controlled by a thermostat 16 built-in is constituted to he moved vertically by an elevator 17. An electrolyzing ozone producer 19 to produce ozone by electrolyzing pure water is arranged while a vapor liquid separator 20 is arranged on the upper gas outlet of the ozone producer 19 to heat and electrolyze ozone for producing plenty of oxygen atomic radical. Through these procedures, said radical reacts to e photoresist film coated on the surface of semiconductor wafer 13 so that ashing process may be performed to remove the photoresist film. |
