Method for making planar 3D heterepitaxial semiconductor structures with buried epitaxial silicides

摘要

A 3D epitaxial structure is described in which metal compounds are formed in a semiconductor layer, the metal compounds being epitaxial with the semiconductor layer and having a top surface which is planar with the top surface of the semiconductor layer. Onto this another layer can be epitaxially grown, such as an additional semiconductor layer. The technique for forming such a structure utilizes a starting material for metal compound formation which leaves a residue that is preferentially etched in order to preserve the embedded metal compound and to leave a substantially planar surface comprising the metal compound epitaxial regions and the unreacted surface regions of the semiconductor layer.