| 摘要 |
PURPOSE:To prevent new occurrence of a defect due to reattachment at the time of sputter etching of an excessive metal film defect by coating and protecting the surface of a pattern adjacent to the defect with an organic film in advance. CONSTITUTION:The sample is placed in a high-vacuum chamber, and a carbon- containing gas 5 ejected on the surface of the sample, and at the same time, gallium ion beams 4 are projected on the black spot defect 3 and its circumference, resulting in depositing the organic carbon films 6 on the ion beam- projected parts. The organic carbon film 6 and the black spot chromium defect 3 are removed by the sputter etching, and the sputtered chromium is reattached to the organic carbon films 6 as the reattached chromium films 7, 8 but not attached to the surface of a glass substrate 1 and the chromium pattern 2, and the clean pattern free from reattached metal film can be obtained by removing the organic carbon films by using a chemical agent after thus correcting the pattern defect. |
