| 摘要 |
PURPOSE:To obtain the titled resist having large dry-etching resistivity and suitable for the two layer resist method by incorporating a silicon contg. styrene polymer composed of a specific structural unit to the titled material. CONSTITUTION:The titled material contains the silicon contg. styrene polymer composed of a structural unit shown by the formula wherein (l) is >=3 an integer, R1, R2 and R3 are each hydrogen atom or 1-3C alkyl group. In the formula, (l) is preferably 3-5, in view of easily synthesizing it and the efficiency of improving the anti-etching property. The pattern obtd. by exposing and processing the resist material has sufficient resistivity as a mask of etching a thick org. high polymer layer by dryetching method, and the pattern- transcribing of the resist material to the org. high polymer is effected with good accuracy. |
