| 摘要 |
PURPOSE:To reduce a smear thereby to obtain a solid state image sensor having a transfer electrode of multilayer having a low resistance and a good dielectric breakdown strength by providing an intermediate layer made of metal or metal silicide at the electrode. CONSTITUTION:A transfer electrode 10 is formed of a polycrystalline layer 11 having an intermediate layer 12 made of M0 therein. An aluminum light shielding film may be formed by covering the top of the electrode 10 through a silicon oxide film 2, but is not always necessary. That is, since the electrode 10 is formed to include the layer 12, it acts to shield a light. Thus, the light shielding film may not separately be necessarily formed, and it is not necessary to flatten the surface by increasing the thickness of the silicon oxide film on the electrode. Since the layer 12 having a light shielding action is disposed near the surface of a semiconductor substrate 1, an incident light refraction phenomenon by the recess shape of the film 2 can be largely avoided. Thus, a smear can be remarkably suppressed, and a transfer electrode resistance can be significantly reduced. |
