发明名称 |
PRODUCTION OF CRYSTAL OF MULTIPLE SYSTEM |
摘要 |
PURPOSE:To produce high-quality crystal of multiple system having stable characteristics in high yield, by putting a proper substance in a vapor pressure control part communicated with a reaction part to grow crystal consisting of plural elements and sustaining the crystal at a given temperature. CONSTITUTION:A sealed reaction tube 1 is divided by a partition wall 2 into a reaction part 3 and a vapor pressure control part 4 and both the parts are communicated with a small hole. A raw material for crystal of multiple system consisting of three or more constituent elements placed on a boat 5 is put in the reaction part 3. The raw material is heated by a furnace 8 set at the outer periphery of the reaction tube 1 and crystal 10 is grown from melt 9 of the raw material. Further a vapor pressure control substance 6 consisting of two or more components having high vapor pressure of the raw material is put in the vapor pressure control part 4 and is kept at a given temperature by the furnace 8. Consequently, high-quality crystal of multiple system is obtained by growing the crystal 10 while controlling the vapor pressure of the reaction system. |
申请公布号 |
JPS6345198(A) |
申请公布日期 |
1988.02.26 |
申请号 |
JP19870089131 |
申请日期 |
1987.04.11 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
MIYAZAKI TAKESHI |
分类号 |
C30B11/00;C30B11/06;C30B11/12;C30B29/40;C30B29/48 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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