发明名称 PRODUCTION OF CRYSTAL OF MULTIPLE SYSTEM
摘要 PURPOSE:To produce high-quality crystal of multiple system having stable characteristics in high yield, by putting a proper substance in a vapor pressure control part communicated with a reaction part to grow crystal consisting of plural elements and sustaining the crystal at a given temperature. CONSTITUTION:A sealed reaction tube 1 is divided by a partition wall 2 into a reaction part 3 and a vapor pressure control part 4 and both the parts are communicated with a small hole. A raw material for crystal of multiple system consisting of three or more constituent elements placed on a boat 5 is put in the reaction part 3. The raw material is heated by a furnace 8 set at the outer periphery of the reaction tube 1 and crystal 10 is grown from melt 9 of the raw material. Further a vapor pressure control substance 6 consisting of two or more components having high vapor pressure of the raw material is put in the vapor pressure control part 4 and is kept at a given temperature by the furnace 8. Consequently, high-quality crystal of multiple system is obtained by growing the crystal 10 while controlling the vapor pressure of the reaction system.
申请公布号 JPS6345198(A) 申请公布日期 1988.02.26
申请号 JP19870089131 申请日期 1987.04.11
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MIYAZAKI TAKESHI
分类号 C30B11/00;C30B11/06;C30B11/12;C30B29/40;C30B29/48 主分类号 C30B11/00
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