| 摘要 |
PURPOSE:To construct a higher-gain, higher-integration device by a method wherein a self-oxidation film on a superconducting electrode is used as an interlayer insulating layer electrically isolating a superconducting electrode from a control electrode and a gate insulating layer and interlayer insulating layer are formed in a similar oxidation step. CONSTITUTION:Boron is selectively introduced into an Si semiconductor layer 1 for the formation of an impurity-diffused layer 8, after which an Nb thin film is formed on the surface of the Si semiconductor substrate 1. A plasma etching step follows wherein separation is accomplished into two superconducting electrodes 2 and 3 (source and drain electrodes) with a resist processed by electron beam lithography serving as a mask. A plasma oxidation step follows wherein a gate insulating layer 6 of a self-oxidation film SiO2 produced from Si and an interlayer insulating layer 5 of a self-oxidation film Nb2O5 produced from Nb are formed. Al is attached by evaporation, which is then formed into a control electrode 4 after a desired geometry through a photoresist mask for the completion of a device. |
