MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To prevent a static breakdown preventing MOS itself from electrostatically breaking down by a method wherein a drain region of static breakdown preventing MOS of Bi-CMOS is formed in the same stop as that of a collector lifting up region of a bipolar transistor. CONSTITUTION:An input step inverter of Bi-CMOS is composed of an n-MOSQn1 and a p-MOSQp1. An n-MOSQnc is connected to an input terminal directly or through the intermediary of a protective resistor element to prevent an input step inverter from breaking down. A source region and a drain region 13B of the n-MOSQnc are formed in the same step as that of a region 13A lifting a collector C of a bipolar transistor Bi up to the surface of semiconductor substrate. Through these procedures, the source.drain regions of input step protecting MOSQnc can be formed in high impurity concentration and junction depth to prevent the MOSQnc itself from electrostatically breaking down without increasing the manufactureing process.