SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided to form a semiconductor device while reducing generation of defects by preventing a reactant generated by oxidation or degeneration in a portion of a buried gate from being easily etched. A substrate(100) is divided into first and second regions, and a gate trench(110) is formed in the first region. A first gate structure including metal partially fills the inside of the gate trench. A passivation layer pattern(120a) is formed on the first gate structure, included in the gate trench. A first source/drain(130) is formed under the surface of the substrate adjacent to both sides of the first gate structure. A second gate structure is formed on the surface of the substrate in the second region, having a shape in which a gate oxide layer, a polysilicon pattern and a metal silicide layer pattern(122a) are stacked. A second source/drain(132) is formed under the surface of the substrate adjacent to both sides of the second gate structure. The metal silicide layer pattern included in the second gate structure can include tungsten silicide.