| 摘要 |
PURPOSE:To obtain the high-performance minute MOS comprising high pressure resistance and high driving capabilty by using a gate having a triple structure to alleviate a potential gradient in adjacency of the drains and to strengthen an electric field in adjacency of the sources. CONSTITUTION:The gate is composed of a control gate 1, a drain field control gate 2 and a source field control gate 3 formed on both sides of the gate 1 respectively. A source 4 and a drain 5 are composed of the well-known structures. The drain field control gate 2 generates a new electric field in adjacency of the drain to alleviate the potential gradient in adjacency of the drain. The source field control gate generates a new electric field in adjacency of the source in vertical direction to the channel, thereby reducing a potential barrier controlling the drain current in adjacency of the source to increase the drain current. |
