| 摘要 |
PURPOSE:To avoid fixed pattern noise and smear by a method wherein a cut part is provided near a crossing point of a reading gate and a signal wire and the channel part of an SOI-TFT is formed in a single crystal thin film formed in the cut part. CONSTITUTION:An LOCOS oxide film with a thickness of about 0.5mum is formed to define a photodiode region 1. Then polycrystalline silicon is deposited over the whole surface with the thickness of about 0.5 mum. If the surface is scanned by a laser beam 7 in this situation, the polycrystalline silicon is melted by the heat of the laser beam 7 and recrystallized. With the photodiode 1 as a seed crystal, a single crystal grows from the seed to the direction of the laser scanning on the LOCOS oxide film. Therefore, a high quality SOI film which is completely free from a grain boundary can be formed in a region A. If pattern formation is carried out with a conventional MOS process after that, the channel part of the SOI-TFT is formed in a region B at the center of the region A. |
