发明名称 CONTRAST ENHANCED MATERIAL FOR PATTERN FORMATION
摘要 PURPOSE:To enable formation of an ultrafine resist pattern with high accuracy by incorporating a specific photoreactive reagent, water soluble polymer and water into the titled material or the compd. bonded with said photoreactive reagent and water soluble polymer and water therein the preparing the material in such a manner that all the components can be dissolved by aq. solvents regardless of whether light is projected or not. CONSTITUTION:This material contains the photoreactive reagent expressed by formula I and water or the compd. bonded with the photoreactive reagent expressed by formula I and the water soluble polymer and the water. The material is so prepd. that all the components can be dissolved by the aq. solvents regardless of whether light is projected or not. In formula I, R1, R2, R30-R35 are respectively substituents and R30, R32 in particular are substituents except an H atom, X<-> denotes a cation which can form a diazonium salt. The resist pattern sized <=0.5mum is thereby easily obtd. without decreasing the yield.
申请公布号 JPS6344648(A) 申请公布日期 1988.02.25
申请号 JP19860189063 申请日期 1986.08.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ENDO MASATAKA;SASAKO MASARU;OGAWA KAZUFUMI
分类号 G03F7/095;G03C1/00;G03F7/09;G03F7/11;H01L21/027 主分类号 G03F7/095
代理机构 代理人
主权项
地址