| 摘要 |
PURPOSE:To eliminate the variation of characteristics and improve heatresistant properties and realize extremely fine patterns by a method wherein metal materials are so determined as to make the potential barrier between an alloying reaction layer of 1st and 2nd metal materials and a semiconductor substrate lower than the potential barrier between the 2nd metal material and the semiconductor substrate. CONSTITUTION:An epitaxial layer 2 is made to grow on one of the main surfaces of a substrate 8 and separated into respective element regions by an SiO2 layer 1. After an Si3N4 film is removed by etching, a part of a foundation SiO2 film is removed and a Pt film 13 is applied to the whole surface. After a PtSi layer 14 is selectively formed, the SiO2 film 1 is partially removed by fluoric acid treatment and, further, a PtAl2 layer 3 is selectively formed at the position of the PtSi layer 14 only. Therefore, the metal layer 14 with a lower potential barrier is formed on the center part and a metal layer 4 with a higher potential barrier is formed on the circumferential part with a high accuracy in a self-aligning manner. With this constitution, mask alignment can be eliminated and the increase in integration of an SBD can be achieved with a high yield. |
