| 摘要 |
PURPOSE:To obtain a fine pattern with a high aspect ratio by using a multilayered resist to avoid direct ion implantation to a semiconductor substrate, thereby enhancing the dry etching resistance of the resist. CONSTITUTION:On a semiconductor substrate 10, a novolak-system resist 11, SOG (coated with SiO2) 12, and PMMA 13 are sequentially spin-coated. A desired resist pattern is drawn with an electron beam and developed to form a resist pattern 13A. With the pattern 13A with a mask a pattern 12A of the SOG is created by the RIE. Si<+> ions are implanted into the resist 11, and the SOG 12 is peeled with the HF. After exposure of the entire surface to ultraviolet rays l, the structure is dipped into a developing solution dedicated to novolak- system resists, whereby a resist pattern 11A with a high aspect ratio which is excellent in the dry etching resistance is obtained because a S<+> ion-implanted area 1 is insoluble. In this manner, there is no damage in the substrate, and a fine pattern formed in an electron beam resist which is poor in the dry etching resistance can be transferred. |
