| 摘要 |
PURPOSE:To apply a dry etching to a substrate by implanting ions into a resist pattern on the substrate to change it to a carbon film, thereby strengthing the etching resistance. CONSTITUTION:When ions are implanted into a resist pattern 1 formed on a substrate 5 using an inert gas or a metal such as C and Si as an ion source, ions 2 penetrate into the resist while destroying the covalent bonding of an organic substance and stop at the depth of range. The resist layer in which the bonding was destroyed changes to a carbon layer 3. The carbon film is excellent in the dry etching resistance. The ion implantation is applied before or after pre-baking the resist, and the carbon film thickness is controlled by the acceleration voltage at the ion implantation time. With this constitution, the formation of a fine pattern by a thin film resist becomes easy, and a dry etching can be applied with a high precision. |
