| 摘要 |
A method for providing a diode comprises the step of forming a highly resistive polycrystalline silicon layer (36) over the depletion region between the anode (30) and the cathode (32). The polycrystalline silicon layer reduces the radius of curvature of the depletion region and increases the diode breakdown voltage. The highly resistive layer is formed by depositing a polycrystalline silicon layer on the diode, implanting the lab with both P and N type dopants, and heating the resulting structure. Of importance, the sheet resistivity of the polycrystalline silicon layer is dependent on the temperature at which the layer is heated. The resistivity of this layer can be controlled with great precision. |
