| 摘要 |
PURPOSE:To stabilize a mode, and to reduce a threshold by making the Al composition of a p-type In1-x-yGaxAly group clad layer larger than a specific value. CONSTITUTION:An n-GaAs buffer layer 12 and an n-InGaP buffer layer are formed onto an n-GaAs substrate 11. An i-InAlP clad layer 14, an InGaP active layer 15 and a double hetero-junction structure section consisting of p-InGaAlP group clad layers 16-18 are shaped onto the layer 13. The layer 18 is processed to a stripe shape at that time. A p-InGaP contact layer 19 and a p-GaAs contact layer 20 are formed onto the layer 18. An n-GaAs current blocking layer 21 is shaped on the side surface of the layer 20. In said constitution, the rate of Al in In1-x-yGaxAly forming the layers 16-18 is set to y>=4. Accordingly, the confinement of carriers can be realized by utilizing the barriers of the layers 16-18 and the layer 21, thus excellently confining carriers by the barriers. |
