Composition for use in the production of integrated circuits and method for its preparation and use.

摘要

A photoresist stripping solution is prepared by adding hydrogen peroxide to concentrated sulphuric acid under controlled temperature conditions, preferably at below 20 DEG C. The concentration of the sulphuric acid in the solution is preferably maintained at at least 80% wt to maximise the concentration of the active stripping species permonosulphuric acid. Stripping solutions having extended storage life have a content of soluble tin compound preferably sodium stannate and preferably also a phosphonate sequestrant which shows a synergism with the tin compound. Such extended life solutions also preferably have a low content of transition metals and of particles. The stripping solution may be utilised at ambient temperature.