| 摘要 |
Semiconductor radiation detector comprising a radiation detecting element made of a compound semiconductor and operable at room temperature in response to a radiation event to produce a corresponding output signal; a preamplifier for preamplifying the output from the detecting element to produce a corresponding signal; and pulse shaping amplifier including a quasi-gaussian filter comprising a combination of a first differentiator and an integrator to shape and amplify the signal from the preamplifier; means for obtaining information about charge collection time at each radiation event by comparing the pulse height of a signal caused by the output from the differentiator and the pulse height of the output from the shaping amplifier; and means for correcting the pulse height of the output signal form the shaping amplifier in accordance with the information about charge collection time at each radiation event, thereby to improve the deterioration of the energy resolution caused by incomplete charge collection. There is also provided a semiconductor position-sensitive radiation detector which employs a plurality of the above-mentioned compound semiconductor radiation detecting elements so arranged in row and column as to form a matrix and which can be used effectively, for example, in nuclear medicine.
|
