发明名称 |
Homogeneous fine grained metal film on substrate and manufacturing method thereof |
摘要 |
A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the metal and a reactive gas and serving to suppress growth of grains (12') in the respective metal layers and to suppress electromigration of grain boundaries (13'). In a method for manufacturing a metal film (6') having homogeneous and fine grains on a substrate in accordance with the present invention, one or more intervening layers (14) are formed by introducing a gas reactive with the metal film one or more times during deposition of the metal film, whereby intervening layers of a metal compound are interposed between the successively deposited metal layers. Thus, a metal film of a multilayered structure including multiple metal layers separated by the intervening layers is formed.
|
申请公布号 |
US4726983(A) |
申请公布日期 |
1988.02.23 |
申请号 |
US19850811885 |
申请日期 |
1985.12.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HARADA, HIROSHI;HIRATA, YOSHIHIRO;TOSA, MASANOBU |
分类号 |
H01L21/285;C23C14/00;C23C14/02;C23C16/02;C23C16/12;H01L21/28;H01L21/768;H01L23/532;(IPC1-7):H01L21/72;H01L21/60 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|