发明名称 Homogeneous fine grained metal film on substrate and manufacturing method thereof
摘要 A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the metal and a reactive gas and serving to suppress growth of grains (12') in the respective metal layers and to suppress electromigration of grain boundaries (13'). In a method for manufacturing a metal film (6') having homogeneous and fine grains on a substrate in accordance with the present invention, one or more intervening layers (14) are formed by introducing a gas reactive with the metal film one or more times during deposition of the metal film, whereby intervening layers of a metal compound are interposed between the successively deposited metal layers. Thus, a metal film of a multilayered structure including multiple metal layers separated by the intervening layers is formed.
申请公布号 US4726983(A) 申请公布日期 1988.02.23
申请号 US19850811885 申请日期 1985.12.20
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HARADA, HIROSHI;HIRATA, YOSHIHIRO;TOSA, MASANOBU
分类号 H01L21/285;C23C14/00;C23C14/02;C23C16/02;C23C16/12;H01L21/28;H01L21/768;H01L23/532;(IPC1-7):H01L21/72;H01L21/60 主分类号 H01L21/285
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