发明名称 Method of producing sheets of crystalline material
摘要 A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated, and the substrate can optionally be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
申请公布号 US4727047(A) 申请公布日期 1988.02.23
申请号 US19810251214 申请日期 1981.04.06
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 BOZLER, CARL O.;FAN, JOHN C. C.;MCCLELLAND, ROBERT W.
分类号 C30B19/00;C30B25/02;C30B25/04;C30B33/00;H01L21/20;H01L21/263;H01L21/84;H01L25/04;H01L31/04;H01L31/042;H01L31/068;H01L31/18;H01S5/02;(IPC1-7):H01L21/20;H01L21/302 主分类号 C30B19/00
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