发明名称 |
Depleted channel photoconductor |
摘要 |
Photoconductors with channels that lie in the surface depleted region of a GaAs structure are described. These devices have nanoampere bias current, and exhibit photoconductive gain. In contrast to other photoconductors, their low frequency responsivity is of the same order as that in the GHz region, alleviating problems of equalization necessary in receiver applications. As well, these devices exhibit over 60 dB isolation as optoelectronic switches.
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申请公布号 |
US4727349(A) |
申请公布日期 |
1988.02.23 |
申请号 |
US19860897652 |
申请日期 |
1986.08.18 |
申请人 |
CANADIAN PATENTS & DEVELOPMENT LIMITED |
发明人 |
MACDONALD, ROBERT I.;LAM, DENNIS K. W.;NOAD, JULIAN P. |
分类号 |
H01L31/08;H01L31/18;(IPC1-7):H01L31/08 |
主分类号 |
H01L31/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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