| 摘要 |
PURPOSE:To make it possible to form a thin insulating film having excellent characteristics uniformly on the surface of a polycrystalline film, by forming a first nitride film on the surface of the polycrystalline film, forming a second nitride film thereon, converting the second nitride film into an oxide film by thermal oxidation, and forming the insulating film out of the oxide film and the first nitride film. CONSTITUTION:A thin Si3N4 film 8 (first nitride film) is formed on the surface of a polycrystalline silicon film 7 by nitriding at a high temperature. Thereafter, an Si3n4 film 9 (second nitride film) having a specified thickness is formed on the Si3N4 film 8. In this state, thermal oxidation is performed to convert the Si3N4 film 9 into an SiO2 film 10. The thermal oxidation is performed excessively, to completely convert the Si3n4 film 9 into the SiO2 film 10. Thus, the SiO2 film 10 having the uniform thickness can be obtained. An insulating film for a stacked capacitor C is formed by the SiO2 film 10 and the Si3N4 film 8 which are formed in this way. |
