| 摘要 |
PURPOSE:To omit a mask forming process for a semiconductor region for alpha-ray countermeasure and to prevent soft errors due to the alpha rays, by using a mask for forming a direct contact part, and forming the semiconductor region for alpha-ray countermeasure. CONSTITUTION:A p<-> type well region 2 is formed on the specified main surface part of a semiconductor substrate 1. A field insulating film 3 is formed at the specified parts of the semiconductor substrate 1 and the well region 2. A p-type channel stopper region 4 is formed at the specified part of the well region 2. An insulating film 5 is formed on the semiconductor substrate 1, which serves as a semiconductor-element forming region, and on the upper part of the main surface of the well region 2. A mask 19 for forming contact holes 6 at a direct contact part is formed. The mask 19 is used, to remove the insulating film 5 which is exposed through the mask. After the contact holes 6 at the direct contact part are formed, the mask 19 is removed. Conducting layers 7A-7D are formed on the field insulating film 3 and the insulating film 5. The conducting layers 7A-7D are connected to the main surface of the specified well region 2 through the contact holes 6. |
