| 摘要 |
A semiconductor power module includes a metallized ceramic carrier plate having an opening formed therein, a semiconductor power component with a base area of a given size adjacent the ceramic plate at the opening, a heat pipe integrated in the semiconductor power module having a vapor space, a condensation zone and a heating zone for distributing heat removed from the semiconductor power component at the heating zone over an area of the condensation zone being larger than the given area, a highly heat-conducting ceramic base plate having two metallized sides, and a frame vacuum-tightly interconnecting the carrier plate and the base plate forming the vapor space of the heat pipe therebetween.
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